PART |
Description |
Maker |
BSM200GA120DN2 |
550 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
IXGH15N120B2D1 IXGT15N120B2D1 |
HiPerFAST IGBT 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA
|
IXYS Corporation
|
APTGT450DA60G |
Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
HMC817LP4E |
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
|
Hittite Microwave Corporation
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|
IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability IGBT Discretes: Low Saturation Voltage Types High Voltage IGBT(VCES200V,VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD 1200V high voltage IGBT
|
IXYS Corporation IXYS, Corp.
|
GP800DDM12 |
Hi-Reliability Dual Switch IGBT Module Advance Information 800 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|